M. Kues, C. Reimer, P. Roztocki, L. R. Cortés, S. Sciara, B. Wetzel, Y. Zhang, A. Cino, S. T. Chu, B. E. Little, On-chip generation of high-dimensional entangled quantum states and their coherent control, 13. TIE-19 Temperature Coefficient of the Refractive Index 2. Thanks to the thermo-optic effect, we can easily change the refractive index (thermo-optic coefficient of silicon, (dn/dT) Si =1.84×10 -4 K -1 at 1550 nm) [14] [15]. We find the Thermo-optic coefficients of PECVD silicon nitride and silicon oxide to be 2.51 + 0.08 E-5 K -1 and 0.96 + 0.09 E-5 K -1 at room temperature while decreasing by an order of magnitude when cooling to 18 K. To show the effect of variations in the thermo-optic coefficients on device performance, we study the tuning of a fully integrated electrically tunable filter as a function of voltage … DETERMINATION OF THE THERMO-OPTIC COEFFICIENT, The thermo-optic coefficient has been measured by evaluating the resonance shift Δλ as a function of the temperature variation Δ, In order to decouple the two contributions, the quantity Δ, IV. S. Dwivedi, A. Ruocco, M. Vanslembrouck, T. Spuesens, P. Bienstman, P. Dumon, T. Van Vaerenbergh, and W. Bogaerts, “, Experimental extraction of effective refractive index and thermo-optic coefficients of silicon-on-insulator waveguides using interferometers, 23. To sign up for alerts, please log in first. Y. Shen, N. C. Harris, S. Skirlo, D. Englund, and M. Soljačić, “, Deep learning with coherent nanophotonic circuits, 5. For silicon, we report absolute refractive index and thenno-optic coefficient (dn/dT) at temperatures ranging ftom 20 to 300 I< at wavelengths from 1.1 to 5.6 pin, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 pm. The lack of two photon absorption at telecom wavelengths and the possibility to fabricate low loss waveguides make SiON an ideal platform for on-chip nonlinear optics and for the realization of reconfigurable integrated quantum lightwave circuits. Copyright © 2009 Elsevier B.V. All rights reserved. K. Ikeda, R. E. Saperstein, N. Alic, and Y. Fainman, “, Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/silicon dioxide waveguides, D. Huber, M. Reindl, Y. Huo, H. Huang, J. S. Wildmann, O. G. Schmidt, A. Rastelli, and R. Trotta, “, M. G. Dutt, L. Childress, L. Jiang, E. Togan, J. Maze, F. Jelezko, A. Zibrov, P. Hemmer, and M. Lukin, “, J. W. Silverstone, D. Bonneau, K. Ohira, N. Suzuki, H. Yoshida, N. Iizuka, M. Ezaki, C. M. Natarajan, M. G. Tanner, R. H. Hadfield, Y. Shen, N. C. Harris, S. Skirlo, D. Englund, and M. Soljačić, “, S. Paesani, A. N. C. Harris, G. R. Steinbrecher, M. Prabhu, Y. Lahini, J. Mower, D. Bunandar, C. Chen, F. N. Wong, T. Baehr-Jones, M. Hochberg, Quantum transport simulations in a programmable nanophotonic processor, 9. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10 −4 K-1. Copyright © 2020 Elsevier B.V. or its licensors or contributors. In this work, we measured the thermo-optic coefficient. Larré, S. Biasi, F. Ramiro-Manzano, L. Pavesi, and I. Carusotto, “, Pump-and-probe optical transmission phase shift as a quantitative probe of the Bogoliubov dispersion relation in a nonlinear channel waveguide, 22. b)Alessandro Trenti and Massimo Borghi contribute equally to this work. K. Luke, A. Dutt, C. B. Poitras, and M. Lipson, “, Overcoming Si_3N_4 film stress limitations for high quality factor ring resonators, 18. A. D. Ludlow, M. M. Boyd, J. Ye, E. Peik, and P. O. Schmidt, “, 11. The average nonlinear parameter n 2 results to be isotropic and equal to n 2 = (7 ± 1) × 10 −16 cm 2 W −1 , which is almost a … K. Kim, W. Reed, K. Quoi, and R. Stolen, “, Measurement of the nonlinear index of silica-core and dispersion-shifted fibers, 27. We use cookies to help provide and enhance our service and tailor content and ads. Three separate experimental setups have been used to investigate the device. constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation and found that the thermal silicon dioxide refractive index was independent of the substrate model used and higher than published values for bulk SiO 2 [17]. Despite this, very few studies on its linear and nonlinear optical properties have been reported so far. Hence, SiON is an excellent trade-off platform for the design of nonlinear and quantum optical integrated photonic circuits, in which thermal reconfiguration and nonlinear parametric processes constitutes fundamental operations. It hasmany useful properties and is used in a range of applications such as silicon, elctronics, refractories, sand, glass making, building materials, investment casting etc. Larré, S. Biasi, F. Ramiro-Manzano, L. Pavesi, and I. Carusotto, “, S. Dwivedi, A. Ruocco, M. Vanslembrouck, T. Spuesens, P. Bienstman, P. Dumon, T. Van Vaerenbergh, and W. Bogaerts, “, T. Capelle, Y. Tsaturyan, A. Barg, and A. Schliesser, “, K. Kim, W. Reed, K. Quoi, and R. Stolen, “, K. Ikeda, R. E. Saperstein, N. Alic, and Y. Fainman, “, This option allows users to search by Publication, Volume and Page. In addition to the well known appealing properties of the SiON, such as low insertion and propagation losses, wide transparency window from the visible to the infrared, lack of multi-photon absorption effects, CMOS compatibility and stress-free fabrication, in this paper we evaluated a sizable thermo-optic coefficient and nonlinear refractive index. M. Borghi, C. Castellan, S. Signorini, A. Trenti, and L. Pavesi, “, 7. The direct measurement of the thermo-optic coefficients of aluminium oxide, tantalum pentoxide and titanium dioxide thin films is presented. It exists in 3 crystalline forms as well as amorphous forms. If you need an account, please register here. Integrated waveguiding devices based on silicon oxynitride (SiON) are appealing for their relatively high refractive index contrast and broadband transparency. C. Castellan, A. Trenti, M. Mancinelli, A. Marchesini, M. Ghulinyan, G. Pucker, and L. Pavesi, “, From shg to mid-infrared spdc generation in strained silicon waveguides, International Society for Optics and Photonics, 8. Selecting this option will search all publications across the Scitation platform, Selecting this option will search all publications for the Publisher/Society in context, The Journal of the Acoustical Society of America, Temperature dependence of the thermo-optic coefficient in crystalline silicon between room temperature and 550 K at the wavelength of 1523 nm, Why I am optimistic about the silicon-photonic route to quantum computing, Two-photon absorption and Kerr coefficients of silicon for, Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm, Tutorial: Integrated-photonic switching structures, Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models, Department of Physics, NanoScience Laboratory, University of Trento, Centre for Materials and Microsystems, Fondazione Bruno Kessler, Instituto de Tecnología Química (CSIC-UPV), https://doi.org/10.1103/physrevlett.118.100503, https://doi.org/10.1103/revmodphys.87.637, https://doi.org/10.1111/j.1151-2916.1991.tb07162.x, https://doi.org/10.1140/epjd/e2017-80208-5, http://creativecommons.org/licenses/by/4.0/.

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